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Silicon Nanowire Biosensors / devices are made using an n-type silicon-on-insulator (SOI) wafer.
The wafers are 8 inches. Silicon fins are about 100 nm wide.
Source/Drain implants: Phosphorus.
A 4000 Å layer of plasma oxide protects the wires, and holes are opened at each end.
Ohmic contacts are made by adding TaN / AlSiCu metal.
Nitride/oxide/nitride layers protect the metal lines but leave metal pads and sensor areas open.
The nanowires are freed by dry etching the passivation layers and wet etching the oxide underneath.
The devices have a thin natural oxide layer on the nanowires.
The Sensors are designed as 40 groups and each group has 5 Sensor elements to a total of 200 Sensors elements per chip
Silicon Nanowire Biosensors / devices are made using an n-type silicon-on-insulator (SOI) wafer.
The wafers are 8 inches. Silicon fins are about 100 nm wide.
Source/Drain implants: Phosphorus.
A 4000 Å layer of plasma oxide protects the wires, and holes are opened at each end.
Ohmic contacts are made by adding TaN / AlSiCu metal.
Nitride/oxide/nitride layers protect the metal lines but leave metal pads and sensor areas open.
The nanowires are freed by dry etching the passivation layers and wet etching the oxide underneath.
The devices have a thin natural oxide layer on the nanowires.
The Sensors are designed as 40 groups and each group has 5 Sensor elements to a total of 200 Sensors elements per chip